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Transistors
2SC5725
Silicon NPN epitaxial planer type
Unit: mm
For DC-DC converter I Features
* Low collector to emitter saturation voltage VCE(sat) * Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
1
0.40+0.10 -0.05 3
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
2
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
I Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 20 15 5 6 2.0 600 150 -55 to +150 mm3 Unit V V V A A mW C C
1.1+0.2 -0.1
(0.65)
0 to 0.1
Marking Symbol: 3C
Note) *: Measure on the ceramic substrate at 15 x 15 x 0.6
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage * Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) Cob fT Conditions VCB = 10 V, IE = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.5 A IC = 0.5 A, IB = 25 mA IC = 1.5 A, IB = 30 mA Collector output capacitance Transition frequency Note) *: Pulse measurement VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -50 mA, f = 200 MHz 20 15 5 200 120 40 130 15 280 100 280 25 mV mV pF MHz 800 Min Typ Max 0.1 Unit A V V V
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
0.40.2
5
1
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2001 MAR

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